Hot spot formation in electron-doped PCCO nanobridges

被引：23

作者：

Charpentier, S. ^{[1
]}

Arpaia, R. ^{[1
]}

Gaudet, J. ^{[2
]}

Matte, D. ^{[2
]}

Baghdadi, R. ^{[1
]}

Lofwander, T. ^{[3
]}

Golubev, D. ^{[4
,5
]}

Fournier, P. ^{[2
]}

Bauch, T. ^{[1
]}

Lombardi, F. ^{[1
]}

机构：

[1] Chalmers, Dept Microtechnol & Nanosci, Quantum Device Phys Lab, S-41296 Gothenburg, Sweden

[2] Univ Sherbrooke, Canadian Inst Adv Res, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada

[3] Chalmers, Dept Microtechnol & Nanosci, Appl Quantum Phys Lab, S-41296 Gothenburg, Sweden

[4] Aalto Univ, Sch Sci, Low Temp Lab OVLL, POB 13500, FI-00076 Aalto, Finland

[5] Karlsruhe Inst Technol, Inst Nanotechnol, D-76021 Karlsruhe, Germany

来源：

PHYSICAL REVIEW B | 2016年 / 94卷 / 06期

基金：

加拿大自然科学与工程研究理事会; 加拿大创新基金会; 瑞典研究理事会;

关键词：

THEORETICAL DEPAIRING CURRENT; CUPRATE SUPERCONDUCTORS; PENETRATION DEPTH; NANOWIRES; FILMS; MAGNETORESISTANCE; TRANSITION; JUNCTIONS; LONG;

D O I：

10.1103/PhysRevB.94.060503

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated the transport properties of optimally doped Pr2-xCexCuO4-delta (PCCO) nanobridges with width down to 100 nm. The critical current density of the nanobridges approaches the Ginzburg-Landau theoretical limit, which demonstrates nanostructures with properties close to the as-grown films. The current voltage characteristics are hysteretic with a sharp voltage switch, of the order of a few millivolts, that we interpret with the occurrence of a hot spot formation. The values of the retrapping current and the voltage switch obtained by modeling the heat transport in the nanobridges are very close to the experimental ones. This feature, together with the extremely short recombination times, make PCCO nanostructures attractive candidates for ultrafast single photon detectors.

引用

页数：5

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