Quantum confinement model for electric transport phenomena in fresh and stored photoluminescent porous silicon films

被引：19

作者：

Iancu, V

Ciurea, ML

机构：

[1] Univ Politehn Bucharest, Dept Phys, Bucharest, Romania

[2] Natl Inst Met Phys, Bucharest 76900, Romania

来源：

SOLID-STATE ELECTRONICS | 1998年 / 42卷 / 10期

关键词：

D O I：

10.1016/S0038-1101(98)00160-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A quantum confinement model is proposed to explain the electrical transport properties in fresh and stored porous silicon (PS) films. In the present paper, the model is verified for the temperature dependence of the dark current. The studied samples are Formed mainly by a network of nanowires, suggesting the separation of the electron Hamiltonian into a longitudinal and a transversal part. The last one can be well described by a two-dimensional (2D) cylindrical infinite quantum well? whose levels determine the dark current activation energies. The storage oxidation induces modifications both in the number and the values of the activation energies, which are in excellent agreement with our model. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：1893 / 1896

页数：4

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