Schottky barrier UV photodetectors based on zinc selenide

被引：6

作者：

Makhnii, VP ^{[1
]}

机构：

[1] Chernovtsy State Univ, UA-274012 Chernovtsy, Ukraine

来源：

TECHNICAL PHYSICS | 1998年 / 43卷 / 09期

关键词：

Zinc; Selenide; Schottky Barrier; Diode Structure; Zinc Selenide;

D O I：

10.1134/1.1259145

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of investigations of the properties of UV photodetectors based on zinc selenide are presented. The influence of the parameters of the diode structure, the temperature, and the voltage on the main characteristics and parameters of the photodetectors is considered. (C) 1998 American Institute of Physics. [S1063-7842(98)02509-4].

引用

页码：1119 / 1120

页数：2