Electrical properties of Au-Sb/p-GaSe:Gd Schottky barrier diode

被引：2
作者：
Duman, Songul [1 ]
机构：
[1] Ataturk Univ, Fac Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2009年 / 12卷 / 06期
关键词：
GaSe; Schottky barrier height; Ideality factor; Series resistance; GALLIUM-SELENIDE; VOLTAGE CHARACTERISTICS; SINGLE-CRYSTAL; THIN-FILMS; P-GASE; DETECTORS; LAYER; PARAMETERS; EXTRACTION;
D O I：
10.1016/j.mssp.2009.12.005
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Experimental results of the fabricated Schottky barrier diode on a GaSe:Gd substrate are presented. The electrical analysis of Au-Sb/p-GaSe:Gd structure has been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) measurements at 296 K temperature. The diode ideality factor and the barrier height have been obtained to be 1.07 and 0.85 eV, respectively, by applying a thermionic emission theory. At high currents in the forward direction, the series resistance effect has been observed. The series resistance has been determined from I-V measurements using Cheung's method. (C) 2010 Elsevier Ltd. All rights reserved.
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页码：243 / 247
页数：5
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