Effect of selenium deficiency on the thermoelectric properties of n-type In4Se3-x compounds

被引:62
作者
Zhu, G. H. [1 ]
Lan, Y. C. [1 ]
Wang, H. [1 ]
Joshi, G. [1 ]
Hao, Q. [2 ]
Chen, G. [2 ]
Ren, Z. F. [1 ]
机构
[1] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA
[2] MIT, Dept Mech Engn, Cambridge, MA 02139 USA
关键词
FIGURE-OF-MERIT; PERFORMANCE;
D O I
10.1103/PhysRevB.83.115201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermoelectric properties of dense bulk polycrystalline In4Se3-x (x = 0, 0.25, 0.5, 0.65, and 0.8) compounds are investigated. A peak dimensionless thermoelectric figure of merit (ZT) of about 1 is achieved for x = 0.65 and 0.8. The peak ZT is about 50% higher than the previously reported highest value for polycrystalline In4Se3-x compounds. Our In4Se3-x samples were prepared by ball milling and hot pressing. We show that it is possible to effectively control the electrical conductivity and thermal conductivity by controlling selenium (Se) deficiency x. The ZT enhancement is mainly attributed to the thermal conductivity reduction due to the increased phonon scattering by Se deficiency, defects, and nanoscale inclusions in the ball-milled and hot-pressed dense bulk In4Se3-x samples.
引用
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页数:4
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