Bond-center hydrogen in dilute Si1-xGex alloys:: Laplace deep-level transient spectroscopy -: art. no. 045204

We apply Laplace deep-level transient spectroscopy in situ after low-temperature proton implantation into dilute Si1-xGex alloys and identify the deep donor state of hydrogen occupying a strained Si-Si bond-center site next to Ge. The activation energy of the electron emission from the donor is; similar to158 meV when extrapolated to zero electrical field. We construct a configuration diagram of the Ge-strained site from formation and annealing data and deduce that alloying with similar to1% Ge does not significantly influence the low-temperature migration of hydrogen as compared to elemental Si. We observe two bond-center-type carbon-hydrogen centers and conclude that carbon impurities act as much stronger traps for hydrogen than the alloy Ge atoms.