Characterization of BaTiO3 thin films on p-Si

被引：10

作者：

Evangelou, EK

Konofaos, N

Aslanoglou, X

Kennou, S

Thomas, CB

机构：

[1] Univ Ioannina, Dept Phys, GR-45110 Ioannina, Greece

[2] Univ Patras, Dept Chem Engn, Patras 26500, Greece

[3] FORTH, ICEHT, Patras 26500, Greece

[4] Nottingham Trent Univ, Dept Elect & Elect Engn, Nottingham NG1 4BU, England

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2001年 / 4卷 / 1-3期

关键词：

ACTFEL devices; XPS; RBS; BaTiO3; films;

D O I：

10.1016/S1369-8001(00)00109-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Polycrystalline BaTiO3 thin films grown on p-Si (1 0 0) substrates by RF sputtering and subjected to a post-thermal annealing at 700 degreesC, were characterized for potential applications as cladding insulators in AC thin-him electroluminescent devices. Building such a device requires the study of an insulator/semiconductor and an insulator/phosphor interface. The study of the BaTiO3 surface in the present work provides information on the creation of defects due to the deposition process. Rutherford backscattering spectroscopy and X-ray photoelectron spectroscopy were used to investigate the surface and bulk created defects. They showed the existence of Ba and Ti oxides formed on the surface probably due to the post thermal annealing, These oxides may be responsible for the creation of interface states between the BaTiO3 film and the subsequent deposited ZnS films in order to build an AC thin-film electroluminescent device. (C) 2001 Elsevier Science Ltd. All rights reserved.

引用

页码：305 / 307

页数：3