Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

被引:1
|
作者
Li, X. T. [1 ]
Du, P. Y. [1 ]
Zhao, Y. L. [1 ]
Tu, Y. [1 ]
Dai, J. L. [1 ]
Weng, W. J. [1 ]
Han, G. R. [1 ]
Song, C. L. [1 ]
机构
[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China
关键词
Thin films; PST; Biphase; Sol-gel processes; Dielectric properties; SOL-GEL METHOD; COMPOSITES;
D O I
10.1016/j.jssc.2010.09.007
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
Pb0.4Sr0.6TiO3 (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x < 0.15, only pure PST perovskite phase were in the thin films. For 0.2 < x < 0.4, the PST/Bi2Ti2O7 biphase were obtained. The thin films with pure Bi2Ti2O7 pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi2Ti2O7 biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase. (C) 2010 Elsevier Inc. All rights reserved.
引用
收藏
页码:2598 / 2601
页数:4
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