Effect of biphase on dielectric properties of Bi-doped lead strontium titanate thin films

被引：1

作者：

Li, X. T. ^{[1
]}

Du, P. Y. ^{[1
]}

Zhao, Y. L. ^{[1
]}

Tu, Y. ^{[1
]}

Dai, J. L. ^{[1
]}

Weng, W. J. ^{[1
]}

Han, G. R. ^{[1
]}

Song, C. L. ^{[1
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Dept Mat Sci & Engn, Hangzhou 310027, Peoples R China

来源：

JOURNAL OF SOLID STATE CHEMISTRY | 2010年 / 183卷 / 11期

关键词：

Thin films; PST; Biphase; Sol-gel processes; Dielectric properties; SOL-GEL METHOD; COMPOSITES;

D O I：

10.1016/j.jssc.2010.09.007

中图分类号：

O61 [无机化学];

学科分类号：

070301 ; 081704 ;

摘要：

Pb0.4Sr0.6TiO3 (PST) thin films doped with various concentration of Bi were prepared by a sol-gel method. The phase status, surface morphology and dielectric properties of these thin films were measured by X-ray diffraction (XRD), scanning electron microscopy (SEM) and impedance analyzer, respectively. Results showed that the thin films with the maximum dielectric constant and minimum dielectric loss were obtained for x=0.15. For x < 0.15, only pure PST perovskite phase were in the thin films. For 0.2 < x < 0.4, the PST/Bi2Ti2O7 biphase were obtained. The thin films with pure Bi2Ti2O7 pyrochlore phase were obtained for x=0.67. The biphase thin films had high tunability and high figure of merit (FOM). The FOM of PST/Bi2Ti2O7 biphase thin film was about 6 times higher than that thin films formed with pure perovskite phase or pure pyrochlore phase. (C) 2010 Elsevier Inc. All rights reserved.

引用

页码：2598 / 2601

页数：4

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