Lasing characteristics of low threshold ZnSe-based blue/green laser diodes grown on conductive ZnSe substrates

被引：60

作者：

Katayama, K ^{[1
]}

Yao, H ^{[1
]}

Nakanishi, F ^{[1
]}

Doi, H ^{[1
]}

Saegusa, A ^{[1
]}

Okuda, N ^{[1
]}

Yamada, T ^{[1
]}

Matsubara, H ^{[1
]}

Irikura, M ^{[1
]}

Matsuoka, T ^{[1
]}

Takebe, T ^{[1
]}

Nishine, S ^{[1
]}

Shirakawa, T ^{[1
]}

机构：

[1] Sumitomo Elect Ind Ltd, Basic High Technol Labs, Konohana Ku, Osaka 5540024, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 01期

关键词：

D O I：

10.1063/1.121781

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room temperature continuous wave operation of ZnSe-based blue/green laser diodes grown homoepitaxially on conductive ZnSe substrates with threshold current densities as low as 176 A/cm(2) has been demonstrated. This is the lowest reported threshold among all short wavelength lasers in the blue/green region. Lifetimes at room temperature of up to 2.1 h have been obtained for lasers with pre-existing defect densities lower than 3 x 10(4) cm(-2). (C) 1998 American Institute of Physics.

引用

页码：102 / 104

页数：3

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