A new characterization method for hot-carrier degradation in DMOS transistors

被引：8

作者：

Pieracci, A ^{[1
]}

Ricco, B ^{[1
]}

机构：

[1] Univ Bologna, Dept Elect, I-40136 Bologna, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1998年 / 45卷 / 08期

关键词：

capacitance measurements; hot carriers; LDMOS device;

D O I：

10.1109/16.704394

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an original method based on capacitance measurements, that is able to localize and estimate hot-electron-induced oxide charge in double-diffused MOS (DMOS) transistors. The method is validated by means of two-dimensional (2-D) numerical simulation. Preliminary results obtained with state-of-the-art devices are presented as example of application.

引用

页码：1855 / 1858

页数：4

共 8 条

[1] AN OVERVIEW OF SMART POWER TECHNOLOGY [J].

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (07) :1568-1575

[2]

CONTIERO C, P ESSDERC 95, P89

[3]

Katto H., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P774

[4] Extraction of lateral device parameters and channel doping profile of vertical double-diffused MOS transistors [J].

Kim, JG ;

Ihn, B ;

Kim, B ;

Lee, KG ;

Lee, W ;

Lee, SW .

SOLID-STATE ELECTRONICS, 1996, 39 (04) :541-546

[5] MEASUREMENT AND SIMULATION OF HOT-CARRIER DEGRADATION IN PMOSFET BY GATE CAPACITANCE [J].

LING, CH ;

SEAH, BP ;

SAMUDRA, GS ;

GAN, CH .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (05) :928-934

[6]

MANZINI S, P INT S POW SEM DEV, P65

[7] Extraction of channel doping profile in DMOS transistors [J].

Pieracci, A ;

Lanzoni, M ;

Galbiati, P ;

Manzini, S ;

Contiero, C ;

Ricco, B .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :485-488

[8] Hot-carrier reliability in submicrometer LDMOS transistors [J].

Versari, R ;

Pieracci, A ;

Manzini, S ;

Contiero, C ;

Ricco, B .

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST, 1997, :371-374

← 1 →