Analytical modeling of a p-n-i-n tunneling field effect transistor

被引：12

作者：

Hosseini, Seyed Ebrahim ^{[1
]}

Moghaddam, M. Kamali ^{[2
]}

机构：

[1] Ferdowsi Univ Mashhad, Dept Elect Engn, Mashhad, Iran

[2] Hakim Sabzevari Univ, ECE Dept, Mashhad, Iran

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2015年 / 30卷

关键词：

Tunnel PET; I-on/I-off ratio; Band-to-band tunneling; Analytical model;

D O I：

10.1016/j.mssp.2014.09.036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents an analytical model for the potential distribution of a p-n-i-n tunneling field effect transistor (TFET). Using the potential distribution, the tunneling drain current is derived analytically by integrating the band-to-band tunneling generation rate over the device volume. According to our knowledge, there is no analytical analysis for this structure in the literature, and this is the first analytical model proposed for a p-n-i-n TFET structure. The proposed analytical model is validated via numerical results obtained from device simulations based on non-local band-to-band tunneling model. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：56 / 61

页数：6

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