Ferromagnetic Fe-doped InAs quantum dots with high Curie temperature

被引：0
|
作者：
Sriharsha, Karumuri [1 ]
Anh, Le Duc [1 ,2 ]
Tanaka, Masaaki [1 ,3 ,4 ]
机构：
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[2] Univ Tokyo, Inst Engn Innovat, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
[3] PRESTO, Japan Sci & Technol Agcy, 4-1-8 Honcho, Kawaguchi, Saitama 3320012, Japan
[4] Univ Tokyo, Ctr Spintron Res Network CSRN, Bunkyo Ku, 7-3-1 Hongo, Tokyo 1138656, Japan
来源：
APPLIED PHYSICS EXPRESS | 2021年 / 14卷 / 08期
关键词：
Quantum Dots; Crystal growth; Molecular Beam Epitaxy; Spintronics; Fe-doped ferromagnetic semiconductors;
D O I：
10.35848/1882-0786/ac1182
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the structural and magnetic properties of Fe-doped InAs quantum dots (QDs) grown on GaAs (001) substrates by molecular beam epitaxy. The size and distribution of the QDs are revealed by atomic force microscopy and characterized by scanning tunnelling electron microscopy, which confirms zinc-blende crystal structure. Magnetometry measurements show the presence of ferromagnetism in the QDs and a very high Curie temperature (>300 K). Magnetic circular dichroism spectra of these QDs exhibit a single peak at 900-1000 nm. These results suggest that the Fe-doped InAs QDs are promising for spintronics device applications such as spin-light emitting diodes operating at room temparture.
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页数：4
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