Work Function and Electron Affinity of Semiconductors: Doping Effect and Complication due to Fermi Level Pinning COMMENT

被引:144
作者
Shao, Guosheng [1 ,2 ,3 ]
机构
[1] Zhengzhou Univ, State Ctr Int Cooperat Designer Lowcarbon & Envir, Zhengzhou 450001, Peoples R China
[2] Zhengzhou Univ, Sch Mat Sci & Engn, Zhengzhou 450001, Peoples R China
[3] Zhengzhou Mat Genome Inst, Zhengzhou 450100, Peoples R China
关键词
band edges; electron affinity; Fermi pinning; ultraviolet photoelectron spectroscopy; work function;
D O I
10.1002/eem2.12218
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconductors are a major category of functional materials essential to various applications to sustain the modern society. Most applied materials or devices utilizing semiconductors are enabled by interfaces or junctions, such as solar cells, electronic/photonic devices, environmental sensors, and redox hetero-catalysts. Herein, the author provides a critical commentary on photoemission measurement of the work function and, more importantly, the electron affinity of semiconductors essential for energy band diagram of heterojunctions. Particular effort is made towards addressing complications associated with Fermi level pinning due to surficial states of doped semiconductors.
引用
收藏
页码:273 / 276
页数:4
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