Evaluation of a dry laser cleaning process

被引：0

作者：

Vereecke, G ^{[1
]}

Rohr, E ^{[1
]}

Heyns, MM ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

来源：

INSTITUTE OF ENVIRONMENTAL SCIENCES AND TECHNOLOGY, 1998 PROCEEDINGS - CONTAMINATION CONTROL | 1998年

关键词：

dry cleaning; laser cleaning; Radiance Process(TM); excimer laser; particle removal; Si0(2); Si3N4; removal efficiency; relative humidity effect;

D O I：

暂无

中图分类号：

TU [建筑科学];

学科分类号：

0813 ;

摘要：

Laser cleaning is one of the new promising dry cleaning techniques considered by semiconductor companies to replace met cleans in the near future. Radiance Process(TM) uses an inert gas jet to remove particles lifted off by the action of a DUV excimer laser. The efficiency of the process in removing Si3N4 and SiO2 particles on Si wafers was optimized by varying laser beam fluence and repetition rate, and the number of laser pulses. The experimental results were compared with theoretical calculations simulating the particle lift off process. Higher efficiencies were obtained upon exposure of wafers to air saturated with moisture prior to laser processing.

引用

页码：202 / 209

页数：8