InAlAs/InGaAs/InP High-Electron-Mobility Transistors with a Composite Channel and Higher Breakdown Characteristics

被引：3

作者：

Maleev, N. A. ^{[1
,2
]}

Vasil'ev, A. P. ^{[3
]}

Kuzmenkov, A. G. ^{[3
]}

Bobrov, M. A. ^{[1
]}

Kulagina, M. M. ^{[1
]}

Troshkov, S. I. ^{[1
]}

Maleev, S. N. ^{[1
]}

Belyakov, V. A. ^{[4
]}

Petryakova, E. V. ^{[4
]}

Kudryashova, Yu. P. ^{[4
]}

Fefelova, E. L. ^{[4
]}

Makartsev, I. V. ^{[4
]}

Blokhin, S. A. ^{[1
]}

Ahmedov, F. A. ^{[5
]}

Egorov, A. V. ^{[5
]}

Fefelov, A. G. ^{[4
]}

Ustinov, V. M. ^{[1
,2
,3
]}

机构：

[1] Russian Acad Sci, Ioffe Inst, St Petersburg 194021, Russia

[2] St Petersburg State Electrotech Univ LETI, St Petersburg 197022, Russia

[3] Russian Acad Sci, Submicron Heterostruct Microelect Res Engn Ctr, St Petersburg 194021, Russia

[4] JSC NPP Salyut, Nizhnii Novgorod 603107, Russia

[5] NPO TECHNOMASH, Moscow 127018, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2019年 / 45卷 / 11期

关键词：

high-electron-mobility transistor; InP; breakdown voltage; millimeter wave amplifiers; RECESS; HEMTS;

D O I：

10.1134/S1063785019110075

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A high-electron-mobility transistor (HEMT) based on InAlAs/InGaAs/InP heterostructures possessing higher breakdown characteristics is developed. An InGaAs composite channel structure, combined with completely selective forming of the double recess structure, is used in the devices. HEMTs with a T-shaped gate 120 nm in length consist of four fingers, each 30 mu m in width, exhibit a maximum transconductance of 810 mS/mm, 460-mA/mm maximum density of drain current and 8- to 10-V drain-to-gate breackdown voltage. The current-amplification cut-off frequency of transistors is over 115 GHz. Due to the enhanced breakdown voltage and the forming of a double recess structure by selective etching, the elaborated transistors are promising for application in the monolithic integrated circuits of the millimeter-wave medium power amplifiers.

引用

页码：1092 / 1096

页数：5

共 17 条

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