Study of dielectric relaxation and AC conductivity of InP:S single crystal

被引:13
作者
El-Nahass, M. M. [1 ]
Ali, H. A. M. [1 ]
El-Shazly, E. A. [1 ]
机构
[1] Ain Shams Univ, Fac Educ, Dept Phys, Cairo 11757, Egypt
关键词
TRANSPORT MECHANISMS; THIN-FILMS; GLASSES; PRESSURE;
D O I
10.1051/epjap/2012120094
中图分类号
O59 [应用物理学];
学科分类号
摘要
The dielectric relaxation and AC conductivity of InP:S single crystal were studied in the frequency range from 100 to 5.25 x 10(5) Hz and in the temperature range from 296 to 455 K. The dependence of the dielectric constant (epsilon(1)) and the dielectric loss (epsilon(2)) on both frequency and temperature was investigated. Since no peak was observed on the dielectric loss, we used a method based on the electric modulus to evaluate the activation energy of the dielectric relaxation. Scaling of the electric modulus spectra showed that the charge transport dynamics is independent of temperature. The AC conductivity (sigma(AC)) was found to obey the power law: A omega(s). Analysis of the AC conductivity data and the frequency exponent showed that the correlated barrier hopping (CBH) model is the dominant mechanism for the AC conduction. The variation of AC conductivity with temperature at different frequencies showed that sigma(AC) is a thermally activated process.
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页数:5
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