Emerging memory technologies

被引：0
|
作者：
Kim, K [1 ]
Jeong, G [1 ]
Jeong, H [1 ]
Lee, S [1 ]
机构：
[1] Samsung Elect Co Ltd, Memory Div, Adv Technol Dev Team, Yongin 449711, Gyeonggido, South Korea
来源：
CICC: PROCEEDINGS OF THE IEEE 2005 CUSTOM INTEGRATED CIRCUITS CONFERENCE | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ferroelectric RAM (FRAM) and phase-change RAM (PRAM) have been recently focused as candidates for ideal memory which can solve the problems of conventional memories. FRAM and PRAM have the properties of non-volatility and fast write speed, which are considered as key properties for high performance mobile application and embedded solution. The process technologies for the integration of high performance / high density emerging memories (FRAM and PRAM) will be reviewed.
引用
收藏
页码：423 / 426
页数：4
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