Metal-insulator transition in anisotropic systems

被引:0
作者
Milde, F [1 ]
Römer, RA [1 ]
Schreiber, M [1 ]
机构
[1] Tech Univ, Inst Phys, D-09107 Chemnitz, Germany
来源
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We study the three-dimensional Anderson model of localization with anisotropic hopping, i.e., weakly coupled chains and weakly coupled planes. In our extensive numerical study we identify and characterize the metal-insulator transition by means of the transfer-matrix method and energy level statistics. Using high accuracy data for large system sizes we estimate the critical exponent as v = 1.6 +/- 0.3. This is in agreement with its value in the isotropic case and in other models of the orthogonal universality class.
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页码:148 / 149
页数:2
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