Emerging Trends in Design and Applications of Memory-Based Computing and Content-Addressable Memories

被引：165
作者：
Karam, Robert [1 ]
Puri, Ruchir [2 ]
Ghosh, Swaroop [3 ]
Bhunia, Swarup [4 ]
机构：
[1] Case Western Reserve Univ, Cleveland, OH 44106 USA
[2] IBM Watson Res Ctr, Yorktown Hts, NY 10598 USA
[3] Univ S Florida, Tampa, FL 33620 USA
[4] Univ Florida, Dept Elect & Comp Engn, Gainesville, FL 32611 USA
来源：
PROCEEDINGS OF THE IEEE | 2015年 / 103卷 / 08期
基金：
美国国家科学基金会;
关键词：
Associative memory (AM); binary CAM; computing with memory; content-addressable memory (CAM); nano-CAM; ternary CAM; transactional memory (TM); RANDOM-ACCESS MEMORY; SCHEME; TCAM; PERFORMANCE; PARALLEL; CIRCUITS; SYNAPSE; DEVICE;
D O I：
10.1109/JPROC.2015.2434888
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Content-addressable memory (CAM) and associative memory (AM) are types of storage structures that allow searching by content as opposed to searching by address. Such memory structures are used in diverse applications ranging from branch prediction in a processor to complex pattern recognition. In this paper, we review the emerging challenges and opportunities in implementing different varieties of CAM/AM structures. Beyond-CMOS silicon and nonsilicon memory technologies hold significant promise in implementing dense, fast, and energy-efficient CAM/AM structures. We describe circuit/architecture level implementations of CAM/AM using these technologies, as well as novel applications in different domains, including informatics, text analytics, data mining, and reconfigurable computing platforms.
引用
收藏
页码：1311 / 1330
页数：20
相关论文
共 95 条
[1]   A 4-Mb 0.18-μm 1T1MTJ toggle MRAM with balanced three input sensing scheme and locally mirrored unidirectional write drivers [J].
Andre, TW ;
Nahas, JJ ;
Subramanian, CK ;
Garni, BJ ;
Lin, HS ;
Omair, A ;
Martino, WL .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (01) :301-309
[2]   0.77 fJ/bit/search Content Addressable Memory Using Small Match Line Swing and Automated Background Checking Scheme for Variation Tolerance [J].
Anh Tuan Do ;
Yin, Chun ;
Velayudhan, Kavitha ;
Lee, Zhao Chuan ;
Yeo, Kiat Seng ;
Kim, Tony Tae-Hyoung .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (07) :1487-1498
[3]  
[Anonymous], P CNE 07 3 INT IEEE
[4]   Current status of ferroelectric randomm-access memory [J].
Arimoto, Y ;
Ishiwara, H .
MRS BULLETIN, 2004, 29 (11) :823-828
[5]  
Arsovski I., 2012, 2012 IEEE Symposium on VLSI Circuits, P116, DOI 10.1109/VLSIC.2012.6243817
[6]   A mismatch-dependent power allocation technique for match-line sensing in content-addressable memories [J].
Arsovski, I ;
Sheikholeslami, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (11) :1958-1966
[7]   A ternary content-addressable memory (TCAM) based on 4T static storage and including a current-race sensing scheme [J].
Arsovski, I ;
Chandler, T ;
Sheikholeslami, A .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (01) :155-158
[8]   Self-referenced sense amplifier for across-chip-variation immune sensing in high-performance content-addressable memories [J].
Arsovski, Igor ;
Wistort, Reid .
PROCEEDINGS OF THE IEEE 2006 CUSTOM INTEGRATED CIRCUITS CONFERENCE, 2006, :453-456
[9]  
Bayram I, 2014, IEEE NON-VOLATILE ME
[10]   Design of Efficient Content Addressable Memories in High-Performance FinFET Technology [J].
Bhattacharya, Debajit ;
Bhoj, Ajay N. ;
Jha, Niraj K. .
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2015, 23 (05) :963-967
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