Effect of correlations on electronic structure and transport across (001) Fe/MgO/Fe junctions

被引：12

作者：

Faleev, Sergey V. ^{[1
]}

Mryasov, Oleg N. ^{[1
]}

van Schilfgaarde, Mark ^{[2
]}

机构：

[1] Univ Alabama, Dept Phys & Astron, Tuscaloosa, AL 35487 USA

[2] Arizona State Univ, Tempe, AZ 85287 USA

来源：

PHYSICAL REVIEW B | 2012年 / 85卷 / 17期

关键词：

MAGNETIC TUNNEL-JUNCTIONS; ROOM-TEMPERATURE; MAGNETORESISTANCE; SPINTRONICS; INTERFACES; BARRIERS;

D O I：

10.1103/PhysRevB.85.174433

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We developed a parametrization of transmission probability that reliably captures essential elements of the tunneling process in magnetic tunnel junctions. The electronic structure of the Fe/MgO/Fe junction is calculated within the quasiparticle self-consistent GW approximation and used to evaluate transmission probability across (001) Fe/MgO interfaces. The transmission has a peak at +0.12 V, in excellent agreement with recent differential conductance measurements for electrodes with antiparallel spin. These findings confirm that the observed current-voltage characteristics are intrinsic to well-defined (001) Fe/MgO interfaces, in contrast to previous predictions based on the local spin-density approximation, and also that many-body effects are important to realistically describe electron transport across well-defined metal-insulator interfaces.

引用

页数：4

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