Group III-nitride lasers: a materials perspective

被引：134

作者：

Hardy, Matthew T. ^{[1
]}

Feezell, Daniel F. ^{[1
]}

DenBaars, Steven P. ^{[1
,2
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

MATERIALS TODAY | 2011年 / 14卷 / 09期

关键词：

CONTINUOUS-WAVE OPERATION; HIGH-POWER; INGAN LASER; PLANE GAN; OPTICAL-PROPERTIES; A-PLANE; DIODES; SINGLE; POLARIZATION; EMISSION;

D O I：

10.1016/S1369-7021(11)70185-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

An overview of III-Nitride based laser diodes (LDs) is presented focusing on the materials challenges in each phase of device development. We discuss early breakthroughs leading to the first commercial GaN LDs, covering crystal growth, p-type doping, and defect reduction. Additional device issues, such as polarization effects, strain, and index dispersion are addressed as they apply to the development of blue and green LDs for pico-projector applications. State of the art device results are highlighted. Devices grown on non-polar and semi-polar GaN substrates address many polarization related problems present in c-plane GaN growth. Device results, advantages, and limitations of various non-polar and semi-polar systems are discussed in terms of polarization properties, Indium incorporation, extended defect formation, and critical thickness. A brief description of challenges and progress in UV LDs is also presented.

引用

页码：408 / 415

页数：8

共 116 条

[1] Low Threshold Current Density InGaN Based 520-530nm Green Laser Diodes on Semi-Polar {20(2)over-bar1} Free-Standing GaN Substrates [J].

Adachi, Masahiro ;

Yoshizumi, Yusuke ;

Enya, Yohei ;

Kyono, Takashi ;

Sumitomo, Takamichi ;

Tokuyama, Shinji ;

Takagi, Shinpei ;

Sumiyoshi, Kazuhide ;

Saga, Nobuhiro ;

Ikegami, Takatoshi ;

Ueno, Masaki ;

Katayama, Koji ;

Nakamura, Takao .

APPLIED PHYSICS EXPRESS, 2010, 3 (12)

[2] EFFECTS OF AIN BUFFER LAYER ON CRYSTALLOGRAPHIC STRUCTURE AND ON ELECTRICAL AND OPTICAL-PROPERTIES OF GAN AND GA1-XALXN(0-LESS-THAN-X-LESS-THAN-OR-EQUAL-TO-0.4) FILMS GROWN ON SAPPHIRE SUBSTRATE BY MOVPE [J].

AKASAKI, I ;

AMANO, H ;

KOIDE, Y ;

HIRAMATSU, K ;

SAWAKI, N .

JOURNAL OF CRYSTAL GROWTH, 1989, 98 (1-2) :209-219

[3]

Akasaki I., 1991, J LUMIN, V48-49, P666

[4] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[5] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH OF A HIGH-QUALITY GAN FILM USING AN AIN BUFFER LAYER [J].

AMANO, H ;

SAWAKI, N ;

AKASAKI, I ;

TOYODA, Y .

APPLIED PHYSICS LETTERS, 1986, 48 (05) :353-355

[6]

[Anonymous], Semiconductor-Today

[7] Demonstration of 426 nm InGaN/GaN laser diodes fabricated on free-standing semipolar (11(2)over-bar2) gallium nitride substrates [J].

Asamizu, Hirokuni ;

Saito, Makoto ;

Fujito, Kenji ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2008, 1 (09) :0911021-0911023

[8] Continuous-Wave Operation of InGaN/GaN Laser Diodes on Semipolar (11(2)over-bar2) Plane Gallium Nitrides [J].

Asamizu, Hirokuni ;

Saito, Makoto ;

Fujito, Kenji ;

Speck, James S. ;

DenBaars, Steven P. ;

Nakamura, Shuji .

APPLIED PHYSICS EXPRESS, 2009, 2 (02)

[9] True Green Laser Diodes at 524 nm with 50 mW Continuous Wave Output Power on c-Plane GaN [J].

Avramescu, Adrian ;

Lermer, Teresa ;

Mueller, Jens ;

Eichler, Christoph ;

Bruederl, Georg ;

Sabathil, Matthias ;

Lutgen, Stephan ;

Strauss, Uwe .

APPLIED PHYSICS EXPRESS, 2010, 3 (06)

[10]

Banal R., 2011, APPL PHYS LETT, V99

← 1 2 3 4 5 6 7 8 9 10 →