Half-metallic ferromagnetic semiconductors of V- and Cr-doped CdTe studied from first-principles pseudopotential calculations

被引:118
作者
Yao, KL
Gao, GY [1 ]
Liu, ZL
Zhu, L
Li, YL
机构
[1] Huazhong Univ Sci & Technol, Dept Phys, Wuhan 430074, Peoples R China
[2] Chinese Acad Sci, Int Ctr Mat Phys, Shenyang 110015, Peoples R China
基金
中国国家自然科学基金;
关键词
half-metallic; diluted magnetic semiconductor; ab initio pseudopotential calculations;
D O I
10.1016/j.physb.2005.05.024
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structure and the ferromagnetism of V- and Cr-doped zinc-blende semiconductor CdTe have been investigated by spin-polarized calculations with first-principles plane-wave pseudopotential method within the generalized gradient approximation for the exchange-correlation potential. We find that the V- and Cr-doped zinc-blende CdTe show half-metallic behavior with a total magnetic moment of 3.0 and 4.0 mu(B) per supercell, respectively. It may be useful in semiconductor spintronics and other applications. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:62 / 66
页数:5
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