Enhanced diffusion of Cu in aluminium under low-energy ion bombardment

被引：1
|
作者：
Sternberg, Z
Stupnisek, M
机构：
[1] Rudjer Boskovic Inst, Zagreb, Croatia
[2] Fac Mech Engn & Naval Architecture, Zagreb, Croatia
来源：
EUROPHYSICS LETTERS | 2005年 / 71卷 / 05期
关键词：
D O I：
10.1209/epl/i2004-10548-y
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Sputter deposition of copper on aluminium, under intense bombardment of low-energy ions resulted in the formation of two interfacial zones. The mean diffusion coefficient effective in the formation of the first zone, <= 3 x 10(-10) cm(2)/s, is attributed to vacancy supersaturation. The results strongly suggest that by supplying the necessary energy for the formation of vacancies, the activation energy for diffusion can be reduced to the level of the enthalpy of migration, provided lifetimes of freely migrating defects are sufficiently long.
引用
收藏
页码：757 / 762
页数：6
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