Stress development and relaxation during reaction of a cobalt film with a silicon substrate.

被引：9
作者：
Rivero, C [1 ]
Gergaud, P
Gailhanou, M
Boivin, P
Fornara, P
Niel, S
Thomas, O
机构：
[1] Univ Aix Marseille 3, CNRS, UMR 6122, TECSEN, F-13397 Marseille, France
[2] Ctr Univ Paris Sud, CNRS, UMR 130, LURE, F-91405 Orsay, France
[3] STMICROELECTRONICS, Rousset, France
来源：
DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2 | 2005年 / 237-240卷
关键词：
stress; reactive diffusion; cobalt silicide; thin film;
D O I：
10.4028/www.scientific.net/DDF.237-240.518
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Stress development and relaxation during reaction of Co films on Si(001) substrates has been studied. Using in-situ synchrotron x-ray diffraction and curvature measurements during annealing, several changes in curvature have been clearly correlated with successive appearing and disappearing of Co silicides : Co,Si, CoSi and finally CoSi, around 500 degrees C. Whereas the Co(2)Si and CoSi phases grow under compressive stress, CoSi(2) grows under tensile stress. This stress buildup is discussed in terms of specific volume change during the Co-Si reaction.
引用
收藏
页码：518 / 523
页数：6
相关论文
共 30 条
  • [1] OBSERVATIONS OF STRESSES IN THIN-FILMS OF PALLADIUM AND PLATINUM SILICIDES ON SILICON
    ANGILELLO, J
    HEURLE, FD
    PETERSON, S
    SEGMULLER, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01): : 471 - 475
  • [2] Angilello J., 1980, THIN FILM INTERFACES, P369
  • [3] INSITU STRAIN-MEASUREMENTS DURING THE FORMATION OF PALLADIUM SILICIDE FILMS
    BUAUD, PP
    DHEURLE, FM
    CHEVACHAROENKUL, S
    IRENE, EA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02): : 304 - 310
  • [4] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS
    DHEURLE, FM
    PETERSSON, CS
    [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297
  • [5] Stresses during silicide formation: A review
    dHeurle, FM
    Thomas, O
    [J]. DIFFUSION AND STRESSES, 1996, 129 : 137 - 149
  • [6] ELLIOT RP, 1965, CONSTITUTION BINARY
  • [7] FLINN PA, 1987, IEEE T ELEC DEV, V689
  • [8] Silicides and ohmic contacts
    Gambino, JP
    Colgan, EG
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 1998, 52 (02) : 99 - 146
  • [9] Influence of Si substrate orientation on stress development in Pd silicide films grown by solid-state reaction
    Gergaud, P
    Megdiche, M
    Thomas, O
    Chenevier, B
    [J]. APPLIED PHYSICS LETTERS, 2003, 83 (07) : 1334 - 1336
  • [10] Stresses arising from a solid state reaction between palladium films and Si(001) investigated by in situ combined x-ray diffraction and curvature measurements
    Gergaud, P
    Thomas, O
    Chenevier, B
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 94 (03) : 1584 - 1591
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