Stress development and relaxation during reaction of a cobalt film with a silicon substrate.

被引：9

作者：

Rivero, C ^{[1
]}

Gergaud, P

Gailhanou, M

Boivin, P

Fornara, P

Niel, S

Thomas, O

机构：

[1] Univ Aix Marseille 3, CNRS, UMR 6122, TECSEN, F-13397 Marseille, France

[2] Ctr Univ Paris Sud, CNRS, UMR 130, LURE, F-91405 Orsay, France

[3] STMICROELECTRONICS, Rousset, France

来源：

DIFFUSION IN MATERIALS: DIMAT 2004, PTS 1 AND 2 | 2005年 / 237-240卷

关键词：

stress; reactive diffusion; cobalt silicide; thin film;

D O I：

10.4028/www.scientific.net/DDF.237-240.518

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Stress development and relaxation during reaction of Co films on Si(001) substrates has been studied. Using in-situ synchrotron x-ray diffraction and curvature measurements during annealing, several changes in curvature have been clearly correlated with successive appearing and disappearing of Co silicides : Co,Si, CoSi and finally CoSi, around 500 degrees C. Whereas the Co(2)Si and CoSi phases grow under compressive stress, CoSi(2) grows under tensile stress. This stress buildup is discussed in terms of specific volume change during the Co-Si reaction.

引用

页码：518 / 523

页数：6

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