Electronic structures of Bi4-xLaxTi3O12 and Bi4ZrxTi3-xO12 single crystals studied by soft-X-ray spectroscopy

被引:10
|
作者
Higuchi, T [1 ]
Moriuchi, Y
Noguchi, Y
Miyayama, M
Shin, S
Tsukamoto, T
机构
[1] Tokyo Univ Sci, Dept Appl Phys, Tokyo 1628601, Japan
[2] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
[3] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan
关键词
Bi4-xLaxTi3O12; Bi4Ti3-xZrxO12; single crystal; electronic structure; soft-X-ray emission spectroscopy (SXES); X-ray absorption spectroscopy (XAS); Ti-O hybridization effect; lattice constant;
D O I
10.1143/JJAP.42.6226
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic structures of La-doped Bi4Ti3O12 (Bi4-xLaxTi3O12) and Zr-doped Bi4Ti3O12 (Bi4ZrxTi3-xO12) single crystals have been studied by X-ray absorption spectroscopy (XAS) and soft-X-ray emission spectroscopy (SXES). In both Bi4-xLaxTi3O12 and Bi4Ti3-xZrxO12, the Ti 3d and O 2p partial densities of states (PDOS) in the valence band region were observed in O 1s and Ti 2p SXES spectra. The energy position of the Ti 3d state overlapped with that of the O 2p state, indicating the occurrence of the hybridization effect between the Ti 3d and O 2p states. The hybridization effect of Bi4-xLaxTi3O12 increases with, increasing La dopant concentration, although that of Bi4Ti3-xZrxO12 does not depends on Zr dopant concentration. This finding indicates that the hybridization effect is closely related to the change in,the bond length between Ti and O ions.
引用
收藏
页码:6226 / 6229
页数:4
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