Simulation of Short-Channel Effects in N- and Ga-Polar AlGaN/GaN HEMTs

被引：79

作者：

Park, Pil Sung ^{[1
]}

Rajan, Siddharth ^{[1
]}

机构：

[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 03期

关键词：

AlGaN/GaN high electron mobility transistor (HEMT); drain-induced barrier lowering (DIBL); Ga-polar; N-polar; short-channel effects; simulation; technology computer-aided design (TCAD); ELECTRON-TRANSPORT; ALN;

D O I：

10.1109/TED.2010.2099121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have carried out 2-D simulation of N-polar and Ga-polar AlGaN/GaN HEMTs to investigate short-channel effects in highly scaled devices. N-polar HEMTs were found to have better drain-induced barrier lowering (DIBL) suppression than Ga-polar HEMTs. The short-channel effects were found to originate from the 2-D potential distribution in the channel and space-charge-limited current through the buffer. The inverted structure of the N-polar HEMT was found to provide better suppression of short-channel effects under idealized theoretical assumptions that were used in the model presented.

引用

页码：704 / 708

页数：5

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