Combined Genetic Algorithm and Neural Network Technique for Transistor Modeling

被引：0

作者：

Jarndal, Anwar ^{[1
]}

机构：

[1] Univ Sharjah, Elect & Comp Engn Dept, Sharjah 27272, U Arab Emirates

来源：

2015 INTERNATIONAL CONFERENCE ON COMMUNICATIONS, SIGNAL PROCESSING, AND THEIR APPLICATIONS (ICCSPA'15) | 2015年

关键词：

GaN HEMT; high power amplifier; large-signal modeling; neural networks; genetic optimization; RF;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A genetic algorithm neural network (GANN) technique for transistor modeling is presented. The proposed method is based on genetic optimization to extract the extrinsic elements of the equivalent circuit model; while the intrinsic part is modelled using a combined genetic neural network approach. The developed procedure has been applied to 1-mm gate width GaN high electron mobility transistor (HEMT) and validated by small- and large-signal measurements.

引用

页数：4

共 11 条

[1] Angelov I, 2005, GAAS 2005: 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium, Conference Proceedings, P309
[2] Borges R., 2003, COMPOUND SEMICONDUCT, P22
[3] CHIPPERFIELD A, 1993, GENETIC ALGORITHM TO
[4] Device technologies for RF front-end circuits in next-generation wireless communications
Feng, M
Shen, SC
Caruth, DC
Huang, JJ
[J]. PROCEEDINGS OF THE IEEE, 2004, 92 (02) : 354 - 375
[5] A new small-signal modeling approach applied to GaN devices
Jarndal, A
Kompa, G
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) : 3440 - 3448
[6] Large-signal model for AlGaN/GaN HEMTs accurately predicts trapping- and self-heating-induced dispersion and intermodulation distortion
Jarndal, Anwar
Kompa, Guenter
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2007, 54 (11) : 2830 - 2836
[7] Improved Modeling of GaN HEMTs on Si Substrate for Design of RF Power Amplifiers
Jarndal, Anwar
Markos, Asdesach Z.
Kompa, Guenter
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2011, 59 (03) : 644 - 651
[8] A temperature-dependent nonlinear analytic model for AlGaN-GaNHEMTs on SiC
Lee, JW
Webb, KJ
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2004, 52 (01) : 2 - 9
[9] Melanie M., 1996, INTRO GENETIC ALGORI
[10] A Review of GaN on SiC High Electron-Mobility Power Transistors and MMICs
Pengelly, Raymond S.
Wood, Simon M.
Milligan, James W.
Sheppard, Scott T.
Pribble, William L.
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (06) : 1764 - 1783

← 1 2 →