Characterization and modeling of Line Width Roughness (LWR)

被引:44
作者
Constantoudis, V [1 ]
Gogolides, E [1 ]
机构
[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIX, PTS 1-3 | 2005年 / 5752卷
关键词
Line Edge Roughness (LER); Line Width Roughness (LWR); CD variation; modeling; correlation function; fractal dimension; roughness exponent; correlation length;
D O I
10.1117/12.600563
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Control of Line Width Roughness (LWR) is one of the biggest challenges of next generation lithographies. However, control necessitates accurate definition and characterization schemes. In this paper, a new definition of LWR is proposed with the benefit of being independent on the resist line length used in the measurement. The definition corresponds to the sigma value of LWR for infinite resist-line-length, but it can be measured using any finite line length. It is based on an appropriate combination of LWR and CD metrology. As the line length (gate width) decreases the LWR is being partitioned between the sigma of LWR for finite lengths and the CD variation. This partitioning is controlled by the correlation length and the roughness exponent. A protocol for LWR characterization is described using these three parameters. Furthermore, LWR modeling using methods for generating lines similar to the experimental ones is investigated. The aim is to control LWR deliberately for better input to device simulators and solving characterization problems. An algorithm based on the convolution method is shown to reproduce reliably the roughness characteristics of real lines. This algorithm needs as input a triplet of parameters similar to those defined above for LWR characterization.
引用
收藏
页码:1227 / 1236
页数:10
相关论文
共 29 条
[1]  
Barabasi A.-L., 1995, FRACTAL CONCEPTS SUR, DOI [10.1017/CBO9780511599798, DOI 10.1017/CBO9780511599798]
[2]   Determination of optimal parameters for CD-SEM measurement of line edge roughness [J].
Bunday, BD ;
Bishop, M ;
McCormack, DW ;
Villarrubia, JS ;
Vladar, AE ;
Dixson, R ;
Vorburger, TV ;
Orji, NG ;
Allgair, JA .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 :515-533
[3]   CD-SEM measurement of line edge roughness test patterns for 193 nm lithography [J].
Bunday, BD ;
Bishop, M .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 :674-688
[4]   Towards a complete description of line width roughness: A comparison of different methods for vertical and spatial LER and LWR analysis and CD variation [J].
Constantoudis, V ;
Patsis, GP ;
Leunissen, LHA ;
Gogolides, E .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 :967-977
[5]   Photo-resist line-edge roughness analysis using scaling concepts [J].
Constantoudis, V ;
Patsis, GP ;
Gogolides, E .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVII, PTS 1 AND 2, 2003, 5038 :901-909
[6]   Quantification of line-edge roughness of photoresists. II. Scaling and fractal analysis and the best roughness descriptors [J].
Constantoudis, V ;
Patsis, GP ;
Tserepi, A ;
Gogolides, E .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (03) :1019-1026
[7]  
CROON JA, 2002, P IEDM
[8]   Effects of different processing conditions on line edge roughness for 193nm and 157nm resists [J].
Ercken, M ;
Leunissen, LHA ;
Pollentier, I ;
Patsis, GP ;
Constantoudis, V ;
Gogolides, E .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 :266-275
[9]   Preliminary evaluation of line-edge roughness metrology based on CD-SAXS [J].
Jones, RL ;
Hu, T ;
Soles, CL ;
Lin, EK ;
Wu, W ;
Casa, DM ;
Mahorowala, A .
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XVIII, PTS 1 AND 2, 2004, 5375 :191-198
[10]  
Kaya S, 2001, SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001, P78