Characterization and modeling of Line Width Roughness (LWR)

被引:44
|
作者
Constantoudis, V [1 ]
Gogolides, E [1 ]
机构
[1] NCSR Demokritos, Inst Microelect, GR-15310 Athens, Greece
来源
METROLOGY, INSPECTION, AND PROCESS CONTROL FOR MICROLITHOGRAPHY XIX, PTS 1-3 | 2005年 / 5752卷
关键词
Line Edge Roughness (LER); Line Width Roughness (LWR); CD variation; modeling; correlation function; fractal dimension; roughness exponent; correlation length;
D O I
10.1117/12.600563
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Control of Line Width Roughness (LWR) is one of the biggest challenges of next generation lithographies. However, control necessitates accurate definition and characterization schemes. In this paper, a new definition of LWR is proposed with the benefit of being independent on the resist line length used in the measurement. The definition corresponds to the sigma value of LWR for infinite resist-line-length, but it can be measured using any finite line length. It is based on an appropriate combination of LWR and CD metrology. As the line length (gate width) decreases the LWR is being partitioned between the sigma of LWR for finite lengths and the CD variation. This partitioning is controlled by the correlation length and the roughness exponent. A protocol for LWR characterization is described using these three parameters. Furthermore, LWR modeling using methods for generating lines similar to the experimental ones is investigated. The aim is to control LWR deliberately for better input to device simulators and solving characterization problems. An algorithm based on the convolution method is shown to reproduce reliably the roughness characteristics of real lines. This algorithm needs as input a triplet of parameters similar to those defined above for LWR characterization.
引用
收藏
页码:1227 / 1236
页数:10
相关论文
共 50 条
  • [1] EUV & 193 mask Line Width Roughness (LWR) impact on wafer CD LWR
    Huang, Chain Ting
    Cheng, Cloud
    Chen, Ming Jui
    PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY XIX, 2012, 8441
  • [2] Effect of line edge roughness (LER) and line width roughness (LWR) on Sub-100 nm device performance
    Lee, JY
    Shin, J
    Kim, HW
    Woo, SG
    Cho, HK
    Han, WS
    Moon, JT
    ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XXI, PTS 1 AND 2, 2004, 5376 : 426 - 433
  • [3] Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method
    Jiang, Xiaobo
    Wang, Runsheng
    Yu, Tao
    Chen, Jiang
    Huang, Ru
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3669 - 3675
  • [4] Investigations on the Correlation between Line-edge-roughness (LER) and Line-width-roughness (LWR) in Nanoscale CMOS Technology
    Jiang, Xiaobo
    Li, Meng
    Wang, Runsheng
    Chen, Jiang
    Huang, Ru
    2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, : 684 - 686
  • [5] Comparative Study of Line Width Roughness (LWR) in Next-Generation Lithography (NGL) Processes
    Patel, Kedar
    Wallow, Thomas
    Levinson, Harry J.
    Spanos, Costas J.
    OPTICAL MICROLITHOGRAPHY XXIII, 2010, 7640
  • [6] Line width roughness (LWR) performance of novel surface conditioner solutions-for immersion lithography
    Lu, Bo Jou
    Liu, E. T.
    Zeng, Anson
    Tseng, Aroma
    Wu, Steven
    Lin, Bill
    Yu, Chun Chi
    Meng, Ling-Jen
    Jaramillo, Manuel, Jr.
    Liao, Ming-Chi
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXV, PTS 1 AND 2, 2008, 6923
  • [7] Characterization of Line Edge Roughness and Line Width Roughness of Nano-scale Typical Structures
    Jiang, Zhuangde
    Zhao, Fengxia
    Jing, Weixuan
    Prewett, Philip D.
    Jiang, Kyle
    2009 4TH IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, VOLS 1 AND 2, 2009, : 299 - +
  • [8] Depth of focus (DOF) and line width roughness (LWR) performance of novel surface conditioner solutions for immersion lithography
    Lu, Bo Jou
    Huang, Yongfa
    Tseng, H. T.
    Yu, Chun Chi
    Meng, Ling-Jen
    Liao, Ming-Chi
    Legenza, Michale
    ADVANCES IN RESIST MATERIALS AND PROCESSING TECHNOLOGY XXIV, 2007, 6519
  • [9] Measurement of line width roughness
    College Science and Technology of Information, Beijing Institute of Technology, Beijing 100081, China
    不详
    不详
    Jiliang Xuebao, 2008, SUPPL. (93-99): : 93 - 99
  • [10] Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability
    Wang, Runsheng
    Jiang, Xiaobo
    Yu, Tao
    Fan, Jiewen
    Chen, Jiang
    Pan, David Z.
    Huang, Ru
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (11) : 3676 - 3682