Single-mode 2.4um InGaAsSb/AlGaAsSb distributed feedback lasers for gas sensing

被引：1

作者：

Gupta, James A. ^{[1
]}

Barrios, Pedro J. ^{[1
]}

Lapointe, Jean ^{[1
]}

Aers, Geof C. ^{[1
]}

Poitras, Daniel ^{[1
]}

Storey, Craig ^{[1
]}

Waldron, Philip ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

QUANTUM SENSING AND NANOPHOTONIC DEVICES VI | 2009年 / 7222卷

关键词：

InGaAsSb; GaSb; laser diodes; distributed feedback lasers; dfb lasers; molecular beam epitaxy; gas sensing; tunable diode laser absorption spectroscopy; BEAM EPITAXY GROWTH; WELL DIODE-LASERS; MU-M; ABSORPTION-SPECTROSCOPY;

D O I：

10.1117/12.817849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-mode laser diodes on GaSb substrates were developed using InGaAsSb/AlGaAsSb triple quantum well active regions grown by molecular beam epitaxy. The devices were fabricated using lateral Cr gratings, with a grating pitch designed to coincide with a strong absorption feature of HF gas, deposited adjacent to a dry-etched narrow ridge waveguide. High sidemode suppression was achieved, and in 20 degrees C continuous-wave operation, devices with a 400 mu m-long cavity provided 4.5mW total output power at the 2396nm target wavelength. Anti-reflection and high-reflection facet coatings exhibited no deleterious effects on the laser tunability or mode quality, thus allowing the preferential extraction of output power from a single laser facet.

引用

页数：7

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