Effect of annealing on the surface and band gap alignment of CdZnS thin films

被引：57

作者：

Kumar, T. Prem ^{[1
,2
]}

Saravanakumar, S. ^{[1
]}

Sankaranarayanan, K. ^{[2
]}

机构：

[1] Syed Ammal Engn Coll, Ramanathapuram 623502, India

[2] Alagappa Univ, Dept Phys, Karaikkudi 630003, Tamil Nadu, India

来源：

APPLIED SURFACE SCIENCE | 2011年 / 257卷 / 06期

关键词：

CdZnS thin films; X-ray diffraction; Atomic force microscopy; Band gap; Surface properties; CHEMICAL BATH DEPOSITION; PHOTOVOLTAIC PROPERTIES; ELECTRICAL-PROPERTIES; CDS FILMS;

D O I：

10.1016/j.apsusc.2010.09.027

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Effects of the annealing temperature on structural, optical and surface properties of chemically deposited cadmium zinc sulfide (CdZnS) films were investigated. X-ray diffraction (XRD) results showed that the grown CdZnS thin films formed were polycrystalline with hexagonal structure. Atomic force microscopy (AFM) studies showed that the surface roughness of the CdZnS thin films was about 60-400 nm. Grain sizes of the CdZnS thin films varied between 70 and 300 nm as a function of annealing temperature. The root mean square surface roughness of the selected area, particular point, average roughness profile, topographical area of roughness were measured using the reported AFM software. The band gaps of CdZnS thin films were determined from absorbance measurements in the visible range as 300 nm and 1100 nm, respectively, using Tauc theory. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1923 / 1927

页数：5

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