Study of the liquid phase epitaxy growth kinetics of AlSbBi and AlGaSbBi

被引：5
作者：
Bhowal, M. K. [1 ]
Dhar, S. [1 ]
机构：
[1] Univ Calcutta, Dept Elect Sci, 92 APC Rd, Kolkata 700009, India
来源：
OPTIK | 2017年 / 147卷
关键词：
Liquid phase epitaxy; Group III-V bismide alloys; Growth kinetics; GALLIUM; LAYERS; GAAS; BI;
D O I：
10.1016/j.ijleo.2017.08.112
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
An one-dimensional diffusion model is used to investigate the concentration profiles of Bi near the growing interface during LPE growth of AlSbBi and AlGaSbBi. The concentration profiles of Bi are obtained for different melt super cooling and cooling rates from which the optimum growth conditions are suggested. Calculated thickness of the grown layers as a function of growth time under different cooling rates show that lower cooling rates should be preferred for getting an uniform growth rate over time. (C) 2017 Elsevier GmbH. All rights reserved.
引用
收藏
页码：277 / 282
页数：6
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