New Screening Method for Improving Transient Current sharing of Paralleled SiC MOSFETs

被引：0

作者：

Ke, Junji ^{[1
]}

Zhao, Zhibin ^{[1
]}

Sun, Peng ^{[1
]}

Huang, Huazhen ^{[1
]}

Abuogo, James ^{[1
]}

Cui, Xiang ^{[1
]}

机构：

[1] North China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing, Peoples R China

来源：

2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA) | 2018年

基金：

国家重点研发计划;

关键词：

SiC MOSFET; spread of parameters; the coefficient of variation; current sharing; transfer curve screening;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

In this paper the effect of the spread of SiC MOSFET device parameters on transient current sharing is investigated. To aid in this investigation, the coefficient of variation is proposed firstly and then used as the evaluating specification for the spread of device parameters. Two main factors which affect transient current sharing, threshold voltage and trans-conductance, are analyzed based on transfer characteristics of MOSFET. Experimental studies show that threshold voltage has larger spread than trans-conductance. Moreover, there is mutual compensation of the effects of threshold voltage and trans- conductance on SiC MOSFET transient current sharing. Finally, to improve transient current sharing of paralleled devices, this paper proposes the transfer curve screening method. Compared to the traditional single parameter screening method, experimental results show that the current imbalance rate with proposed method is only 3.5%, whereas it reaches 26% with traditional method.

引用

页码：1125 / 1130

页数：6

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