An all-sputtered photovoltaic ultraviolet photodetector based on co-doped CuCrO2 and Al-doped ZnO heterojunction

被引:36
作者
Ahmadi, Morteza [1 ,2 ]
Abrari, Masoud [1 ,2 ]
Ghanaatshoar, Majid [1 ,2 ]
机构
[1] Shahid Beheshti Univ, Laser & Plasma Res Inst, Tehran, Iran
[2] Shahid Beheshti Univ, Solar Cell Res Grp, Tehran, Iran
关键词
PHYSICAL-PROPERTIES; UV-PHOTODETECTOR; THIN-FILMS; FABRICATION; CONDUCTION; BAND;
D O I
10.1038/s41598-021-98273-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We propose and fabricate a heterojunction between Al-doped ZnO and (Mg, N)-doped CuCrO2 thin films using the sputtering deposition method. These materials possess wide bandgap that makes them transparent in the visible light but excellent UV-absorbers. On the other hand, the high conductivity of these materials, respectively as n-type and p-type transparent conducting oxides, facilitates the charge transport. We show that the p-n junction fabricated from these materials has the potential to act as a high-performance UV photovoltaic photodetector. The proposed structure, demonstrates fast responses in order of sub seconds, photosensitivity of similar to 41,000, responsivity of 1.645 mA/W, and a detectivity of 3.52 x 10(12) Jones that are significantly improved in comparison with the Al-doped ZnO photoconductor. This excellent improvement is attributed to the capability of the photovoltaic configuration that creates a built-in voltage and facilitates the charge separation and collection rather than recombination in the photoconductor configuration.
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页数:10
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