Magnetic proximity effect in the topological insulator BiSbTeSe2

被引：4

作者：

Banerjee, Karan ^{[1
]}

Besbas, Jean ^{[1
]}

Ren, Peng ^{[2
]}

Wang, Lan ^{[3
]}

Yang, Hyunsoo ^{[1
]}

机构：

[1] Natl Univ Singapore, Dept Elect & Comp Engn, NSNNI, Singapore 117576, Singapore

[2] Nanyang Technol Univ, Sch Phys & Math Sci, Singapore 637371, Singapore

[3] RMIT Univ, Sch Appl Sci, Dept Phys, Melbourne, Vic 3000, Australia

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2015年 / 9卷 / 03期

关键词：

BiSbTeSe2; yttrium iron garnets; topological insulators; magnetic proximity; angular dependences; magnetoresistance; WEAK ANTILOCALIZATION; SURFACE-STATES; BI2SE3; BI2TE3;

D O I：

10.1002/pssr.201510029

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetic proximity effects can lead to novel phenomena in the transport properties of topological insulators. In this study, we demonstrate a characteristic fourfold symmetry in the angular dependence of magnetoresistance in the topological insulator BiSbTeSe2 exfoliated onto magnetic insulator yttrium iron garnet substrates. The observed symmetry is seen to arise when the external magnetic field is in-plane to the current direction and gets enhanced at large field magnitudes. Increasing the temperature and current density diminishes the fourfold symmetry. The symmetry seems to be a signature of the proximity effect from the underlying magnetic substrate on BiSbTeSe2. (C) 2015 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

引用

页码：175 / 179

页数：5

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