Manipulations of size and density of self-assembled quantum dots grown by MOVPE

被引:24
作者
Johansson, J [1 ]
Carlsson, N [1 ]
Seifert, W [1 ]
机构
[1] Univ Lund, S-22100 Lund, Sweden
来源
PHYSICA E | 1998年 / 2卷 / 1-4期
基金
瑞典研究理事会;
关键词
metal organic vapor phase epitaxy; Stranski-Krastanow growth; nucleation; quantum dots; indium phosphide;
D O I
10.1016/S1386-9477(98)00136-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Experiments have been done in order to understand the nucleation and growth of three-dimensional (3D) islands in the Stranski-Krastanow growth mode. 3.5 ML InP was deposited on a GaP-stabilized GaAs substrate by metalorganic vapour phase epitaxy for varying temperatures 580-640 degrees C and varying deposition rates 0.5-3.5 ML/s. The island density increases with decreasing temperature and increasing deposition rate. For low deposition rates the density is linearly proportional to the deposition rate divided by the diffusion constant for surface diffusion (RID), whereas for high deposition rates a temperature dependent maximum density is observed. These results are interpreted within a kinetic model where a short nucleation step in the beginning of the 2D-3D transition, dictated by the supersaturation, determines the density of the islands. Their size is determined by distribution of the material available in excess at the surface. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:667 / 671
页数:5
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