Atomic-level insights through spectroscopic and transport measurements into the large-area synthesis of MoS2 thin films

被引：7

作者：

Samassekou, Hassana ^{[1
]}

Alkabsh, Asma ^{[1
]}

Stiwinter, Kenneth ^{[1
]}

Khatri, Avinash ^{[1
]}

Mazumdar, Dipanjan ^{[1
]}

机构：

[1] Southern Illinois Univ, Dept Phys, Carbondale, IL 62901 USA

来源：

MRS COMMUNICATIONS | 2018年 / 8卷 / 03期

基金：

美国国家科学基金会;

关键词：

MOLYBDENUM-DISULFIDE; GROWTH; DEPOSITION; MONOLAYER; THICKNESS; LAYERS;

D O I：

10.1557/mrc.2018.167

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Several structure-property relationships are reported in large-area MoS2 thin films to understand the effect of sulfur vacancies along with complementary first-principles calculations. X-ray diffraction and reflectivity measurements demonstrated that sputtered MoS2 followed by a high-temperature sulfurization produced sharp film-substrate interface along with high crystalline order. Spectroscopic and transport measurements showed that removal of sulfur vacancies promoted A-B excitons, strong in-plane Raman modes, a sharp increase in dc resistivity, and strong photo-conducting behavior. We have clearly demonstrated that a hybrid method using magnetron sputtering can provide high-quality few-layer transition metal dichalcogenide films.

引用

页码：1328 / 1334

页数：7

共 30 条

[1] Semiconductor-metal transition in semiconducting bilayer sheets of transition-metal dichalcogenides [J].

Bhattacharyya, Swastibrata ;

Singh, Abhishek K. .

PHYSICAL REVIEW B, 2012, 86 (07)

[2]

Blaha P., 2001, WIEN2K AUGMENTED PLA, V60, P1

[3] Large-area MoS2 grown using H2S as the sulphur source [J].

Dumcenco, Dumitru ;

Ovchinnikov, Dmitry ;

Sanchez, Oriol Lopez ;

Gillet, Philippe ;

Alexander, Duncan T. L. ;

Lazar, Sorin ;

Radenovic, Aleksandra ;

Kis, Andras .

2D MATERIALS, 2015, 2 (04)

[4] Molecular Beam Epitaxy of Highly Crystalline Monolayer Molybdenum Disulfide on Hexagonal Boron Nitride [J].

Fu, Deyi ;

Zhao, Xiaoxu ;

Zhang, Yu-Yang ;

Li, Linjun ;

Xu, Hai ;

Jang, A-Rang ;

Yoon, Seong In ;

Song, Peng ;

Poh, Sock Mui ;

Ren, Tianhua ;

Ding, Zijing ;

Fu, Wei ;

Shin, Tae Joo ;

Shin, Hyeon Suk ;

Pantelides, Sokrates T. ;

Zhou, Wu ;

Loh, Kian Ping .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2017, 139 (27) :9392-9400

[5] The rise of graphene [J].

Geim, A. K. ;

Novoselov, K. S. .

NATURE MATERIALS, 2007, 6 (03) :183-191

[6] A consistent and accurate ab initio parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu [J].

Grimme, Stefan ;

Antony, Jens ;

Ehrlich, Stephan ;

Krieg, Helge .

JOURNAL OF CHEMICAL PHYSICS, 2010, 132 (15)

[7] High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity [J].

Kang, Kibum ;

Xie, Saien ;

Huang, Lujie ;

Han, Yimo ;

Huang, Pinshane Y. ;

Mak, Kin Fai ;

Kim, Cheol-Joo ;

Muller, David ;

Park, Jiwoong .

NATURE, 2015, 520 (7549) :656-660

[8] Temperature-dependent phonon shifts in monolayer MoS2 [J].

Lanzillo, Nicholas A. ;

Birdwell, A. Glen ;

Amani, Matin ;

Crowne, Frank J. ;

Shah, Pankaj B. ;

Najmaei, Sina ;

Liu, Zheng ;

Ajayan, Pulickel M. ;

Lou, Jun ;

Dubey, Madan ;

Nayak, Saroj K. ;

O'Regan, Terrance P. .

APPLIED PHYSICS LETTERS, 2013, 103 (09)

[9] Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition [J].

Lee, Yi-Hsien ;

Zhang, Xin-Quan ;

Zhang, Wenjing ;

Chang, Mu-Tung ;

Lin, Cheng-Te ;

Chang, Kai-Di ;

Yu, Ya-Chu ;

Wang, Jacob Tse-Wei ;

Chang, Chia-Seng ;

Li, Lain-Jong ;

Lin, Tsung-Wu .

ADVANCED MATERIALS, 2012, 24 (17) :2320-2325

[10] Two-dimensional MoS2: Properties, preparation, and applications [J].

Li, Xiao ;

Zhu, Hongwei .

JOURNAL OF MATERIOMICS, 2015, 1 (01) :33-44

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