A chemical approach for synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films

被引：41

作者：

Suryawanshi, M. P. ^{[1
,2
]}

Shin, S. W. ^{[1
]}

Ghorpade, U. V. ^{[1
]}

Guray, K. V. ^{[1
]}

Agawane, G. L. ^{[1
]}

Hong, Chang Woo ^{[1
]}

Yun, Jae Ho ^{[3
]}

Patil, P. S. ^{[2
]}

Kim, Jin Hyeok ^{[1
]}

Moholkar, A. V. ^{[2
]}

机构：

[1] Chonnam Natl Univ, Optoelect Convergence Res Ctr, Dept Mat Sci & Engn, Kwangju 500757, South Korea

[2] Shivaji Univ, Dept Phys, Thin Film Nanomat Lab, Kolhapur 416004, Maharashtra, India

[3] Korea Inst Energy Res, Photovolta Res Grp, Taejon 305343, South Korea

来源：

SOLAR ENERGY | 2014年 / 110卷

关键词：

Cu2ZnSnS4 (CZTS); TFSCs; Novel approach of successive ionic adsorption and reaction (SILAR); 1.06% Conversion efficiency; IONIC-LAYER ADSORPTION; SOLAR-CELLS; DEPOSITION; GROWTH; SULFURIZATION; FABRICATION;

D O I：

10.1016/j.solener.2014.09.008

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

A cost-effective chemical approach is developed for the synthesis of photoelectrochemically active Cu2ZnSnS4 (CZTS) thin films. More specifically, CZTS precursor thin films are prepared by the sequential deposition of Cu2SnS3 and ZnS layers using a successive ionic adsorption and reaction (SILAR) technique. The CZTS precursor thin films are sulfurized at different temperatures ranging from 500 to 575 degrees C at intervals of 25 degrees C. The influence of different sulfurization temperatures on the structural, compositional, morphological, and optical properties, as well as on the photoelectrochemical performance is studied. The films sulfurized at 575 degrees C showed a prominent kesterite phase with a nearly stoichiometric composition, dense microstructure with the desired thickness, and an optical band gap energy of 1.47 eV. The photoelectrochemical (PEC) cell fabricated using CZTS thin film sulfurized at 575 degrees C showed the highest short circuit current density (J(SC)) of 8.27 mA/cm(2) with a power conversion efficiency (eta) of 1.06%. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：221 / 230

页数：10

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