A high-performance triode-type carbon nanotube field emitter for mass production

被引：4
作者：
Van Quy, Nguyen [1 ]
Hoa, Nguyen Duc [1 ]
An, Myungchan [1 ]
Cho, Yousuk [1 ]
Kim, Dojin [1 ]
机构：
[1] Chungnam Natl Univ, Sch Nanno Sci & Technol, Taejon 305764, South Korea
来源：
NANOTECHNOLOGY | 2007年 / 18卷 / 34期
关键词：
D O I：
10.1088/0957-4484/18/34/345201
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A triode-type field emission device based on carbon nanotubes (CNTs) synthesized on an anodic aluminum oxide (AAO) template was fabricated. For the improvement of device performance, in addition to the basic advantages of using AAO to obtain uniform CNTs with strong adhesion, several considerations were taken into account, including highly crystalline CNTs synthesized through thermal chemical vapor deposition (CVD) at 1200 degrees C, lowering the contact resistance with a Ti buffer layer and reducing the pixel size and gate-to-emitter distance. The triode-type field emitter showed a high current density of 20 mA cm(-2) and a low turn-on voltage of 16 V. The very high field enhancement factor of 1.6 x 10(6) cm(-1) confirmed the high efficiency of the triode structure in electron extraction.
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页数：6
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