Influence of annealing time on microstructure of one-dimensional Ga2O3 nanorods

被引：26
作者：
Shi, Feng [1 ]
Zhang, Shiying [1 ]
Xue, Chengshan [1 ]
机构：
[1] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2010年 / 498卷 / 01期
关键词：
beta-Ga2O3; Nanorods; Magnetron sputtering; Annealing; GALLIUM OXIDE; BETA-GA2O3; NANORODS; NANOWIRES; PHOTOLUMINESCENCE; GROWTH; NANOSTRUCTURES; FABRICATION; FILMS; GAN;
D O I：
10.1016/j.jallcom.2010.03.106
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Ga2O3 nanorods have been successfully synthesized on Si(1 1 1) substrates by magnetron sputtering through ammoniating Ga2O3 thin films catalyzed with Mo. The influence of ammoniating time on microstructure, morphology and optical properties of GaN nanorods was analyzed in detail using the methods of X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL) spectrum. The results demonstrate that the nanorods are single crystal beta-Ga2O3 with high-quality crystalline after annealing 20 min and these nanorods have the best crystalline with 200 nm in diameter. The growth direction of beta-Ga2O3 nanorods is parallel to [(1) over bar 1 0] orientation. The optical properties of nanorods synthesized at 950 degrees C for 20 min are the best due to strong emission intensity. The luminescence mechanism can be explained by the presence of vacancy. Crown Copyright (C) 2010 Published by Elsevier B.V. All rights reserved.
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收藏
页码：77 / 80
页数：4
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