Phonon softening, chaotic motion, and order-disorder transition in Sn/Ge(111) -: art. no. 016103

被引：44
作者：
Farías, D
Kaminski, W
Lobo, J
Ortega, J
Hulpke, E
Pérez, R
Flores, F
Michel, EG
机构：
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
[3] Univ Autonoma Madrid, Dept Fis Teor Mat Condesada, E-28049 Madrid, Spain
[4] Univ Wroclaw, Inst Phys Expt, PL-50204 Wroclaw, Poland
[5] Max Planck Inst Stromungsforsch, D-37073 Gottingen, Germany
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 91卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.91.016103
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The phonon dynamics of the Sn/Ge(111) interface is studied using high-resolution helium atom scattering and first-principles calculations. At room temperature we observe a phonon softening at then (K) over bar point in the (root3xroot3)R30degrees phase, associated with the stabilization of a (3x3) phase at low temperature. That phonon band is split into three branches in the (3x3) phase. We analyze the character of these phonons and find out that the low- and room-temperature modes are connected via a chaotic motion of the Sn atoms. The system is shown to present an order-disorder transition.
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页码：1 / 016103
页数：4
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