Process control based on quadrupole mass spectrometry

被引:24
作者
Greve, DW [1 ]
Knight, TJ [1 ]
Cheng, X [1 ]
Krogh, BH [1 ]
Gibson, MA [1 ]
LaBrosse, J [1 ]
机构
[1] MKS INSTRUMENTS,NGS DIV,WALPOLE,MA 02081
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 01期
关键词
D O I
10.1116/1.588500
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Real-time feedback control of semiconductor processes based on in situ sensors can complement present statistical process control techniques. In this article, we explore the potential of quadrupole mass spectrometry as an in situ sensing technique. We show that it is possible to sense the fluxes of important species in a plasma process and use these measurements to implement a multivariable control scheme. As an example, the control of hydrogen, unreacted ammonia, and direct current bias in a plasma enhanced chemical vapor deposition silicon nitride process is demonstrated. (C) 1996 American Vacuum Society.
引用
收藏
页码:489 / 493
页数:5
相关论文
共 10 条
  • [1] DEVELOPMENT OF TECHNIQUES FOR REAL-TIME MONITORING AND CONTROL IN PLASMA-ETCHING .2. MULTIVARIABLE CONTROL-SYSTEM ANALYSIS OF MANIPULATED, MEASURED, AND PERFORMANCE VARIABLES
    BUTLER, SW
    MCLAUGHLIN, KJ
    EDGAR, TF
    TRACHTENBERG, I
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (09) : 2727 - 2735
  • [2] ELTA M, 1993, PROCEEDINGS OF THE 1993 AMERICAN CONTROL CONFERENCE, VOLS 1-3, P2990
  • [3] DESORPTION MASS-SPECTROMETRIC CONTROL OF COMPOSITION DURING MBE GROWTH OF ALGAAS
    EVANS, KR
    KASPI, R
    JONES, CR
    SHERRIFF, RE
    JOGAI, V
    REYNOLDS, DC
    [J]. JOURNAL OF CRYSTAL GROWTH, 1993, 127 (1-4) : 523 - 527
  • [4] GELLMAN A, COMMUNICATION
  • [5] PLASMA PROCESSING IN MICROELECTRONICS MANUFACTURING
    GRAVES, DB
    [J]. AICHE JOURNAL, 1989, 35 (01) : 1 - 29
  • [6] HOSCH J, 1995, 3RD INT WORKSH ADV P
  • [7] KNIGHT TJ, 1994, P 32 ALL C COMM CONT, P765
  • [8] MECHANISM OF SINXHY DEPOSITION FROM NH3-SIH4 PLASMA
    SMITH, DL
    ALIMONDA, AS
    CHEN, CC
    READY, SE
    WACKER, B
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (02) : 614 - 623
  • [9] SPANOS C, 1995, 3RD INT WORKSH ADV P
  • [10] MASS-SPECTROMETER-CONTROLLED FABRICATION OF SI/GE SUPERLATTICES
    VANDELEUR, RHM
    SCHELLINGERHOUT, AJG
    MOOIJ, JE
    TUINSTRA, F
    [J]. APPLIED PHYSICS LETTERS, 1988, 52 (12) : 1005 - 1007