Reduction of leakage current of 4H-SiC pin diodes after UV light exposure

被引：0
|
作者：
Wolborski, M.
Bakowski, M.
Schoner, A.
机构：
[1] Royal Inst Technol, Dept Microelect & Appl Phys, SE-16440 Kista, Sweden
[2] Acreo AB, Kista, Sweden
来源：
ELECTRONICS LETTERS | 2007年 / 43卷 / 02期
关键词：
D O I：
10.1049/el:20073494
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A substantial reduction of the leakage current in 4H-SiC pin diodes is observed after < 10 eV UV irradiation in air. The high energy UV is believed to remove carbon clusters from the SiC surface. Comparison of leakage current in 4H-SiC pin diodes after different surface treatments, including reactive ion etching, exposure to two different sources of UV light and different forms of chemical cleaning, is presented. Exposure to 4.9 eV UV light in nitrogen atmosphere enhances the leakage by one order of magnitude.
引用
收藏
页码：129 / 130
页数：2
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