Photon emission mechanisms in 6H and 4H-SiC MOSFETs

被引：0

作者：

Banc, C

Bano, E

Ouisse, T

Scharnholz, S

Schmid, U

Wondrak, W

Niemann, E

机构：

[1] ENSERG, CNRS, UMR 5531, LPCS, FR-38016 Grenoble 1, France

[2] Rhein Westfal TH Aachen, Lehrstuhl 2, Inst Halbleitertech, DE-52074 Aachen, Germany

[3] DaimlerChrysler AG, Rech & Technol 2, DE-60528 Frankfurt, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS - 1999 PTS, 1 & 2 | 2000年 / 338-3卷

关键词：

4H; 6H; impact ionization; mechanism; MOSFETs; photon emission; saturation;

D O I：

10.4028/www.scientific.net/MSF.338-342.695

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have considered 6H and 4H SiC n-MOSFETs from two different origins and studied the photon emission coming from the channel of the devices biased in the saturation regime. We have simultaneously measured the drain and the substrate currents, which enabled us to establish a specific relationship between the currents and the emission intensity. Additionally, we performed a spectral analysis which clearly indicates the contribution of one or more recombination center(s) inside the bandgap of silicon carbide.

引用

页码：695 / 698

页数：4

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