Recent advances in III-V nitride electronic devices

被引：7

作者：

Pavlidis, D ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST | 2004年

关键词：

D O I：

10.1109/IEDM.2004.1419295

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The latest developments made using III-V Nitride technology for microwave and mm-wave applications are reviewed. Design, processing issues are addressed and device, circuit performance is reported. The devices discussed are AlGaN/GaN-based HEMTs, MISFETs, HBTs. Circuit types reviewed include power and low-noise amplifiers. Nitride technology is also investigated for mixer and switch applications.

引用

页码：795 / 798

页数：4