Color center formation in sapphire by swift heavy ion irradiation

被引：28

作者：

Mohanty, T ^{[1
]}

Mishrab, NC

Singh, F

Bhat, SV

Kanjilal, D

机构：

[1] Aruna Asaf Ali Marg, Ctr Nucl Sci, New Delhi 110067, India

[2] Utkal Univ, Dept Phys, Bhubaneswar 751004, Orissa, India

[3] Indian Inst Sci, Dept Phys, Bangalore 560012, Karnataka, India

来源：

RADIATION MEASUREMENTS | 2003年 / 36卷 / 1-6期

关键词：

sapphire; irradiation; color center; luminescence; absorption;

D O I：

10.1016/S1350-4487(03)00234-8

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Single crystals of sapphire (alpha-Al2O3) were irradiated at room temperature with 100 and 190 MeV silver (Ag) ions from the 15 UD Pelletron at the Nuclear Science Centre, New Delhi. The pristine as well as irradiated sapphires are characterized by photoluminescence at room temperature under 2.8 eV blue excitation by a He-Cd laser, ultraviolet (UV)-Visible absorption and electron paramagnetic resonance (EPR). Photoluminescence studies show a peak at 2.2 eV, due to formation of a F-2(2+), center. The intensity of this peak increases with fluence. A sudden increase in peak intensity has been observed after 5 x 10(12) ions/cm(2) where the defect zones started overlapping due to multiple ion impact. UV Visible and EPR studies show formation of defects like F and F+ centers. (C) 2003 Elsevier Ltd. All rights reserved.

引用

页码：723 / 727

页数：5

共 19 条

[1] Luminescence of sapphire and ruby induced by He and Ar ion irradiation [J].

Aoki, Y ;

My, NT ;

Yamamoto, S ;

Naramoto, H .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 114 (3-4) :276-280

[2] Annealing effects on luminescence from Ce-implanted α-Al2O3 [J].

Aono, K ;

Toida, H ;

Terashima, K ;

Iwaki, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2001, 175 :580-584

[3] The concept of effective electronic stopping power for modelling the damage cross-section in refractory oxides irradiated by GeV ions or MeV clusters [J].

Canut, B ;

Ramos, SMM .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1998, 145 (1-2) :1-27

[4] RADIATION-DAMAGE IN AL2O3 CRYSTALS IMPLANTED WITH 3.8 MEV FE2+ IONS [J].

CHEN, Y ;

ABRAHAM, MM ;

PEDRAZA, DF .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2) :1163-1166

[5] OPTICAL-PROPERTIES OF LATTICE-DEFECTS IN ALPHA-AL2O3 [J].

EVANS, BD ;

POGATSHNIK, GJ ;

CHEN, Y .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 91 (1-4) :258-262

[6] Ion irradiation and annealing effects in Al2O3 and MgAl2O4 [J].

Furuno, S ;

Sasajima, N ;

Hojou, K ;

Izui, K ;

Otsu, H ;

Muromura, T ;

Matsui, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 :181-185

[7]

GHAMDI AA, 1990, NUCL INSTRUM METH B, V46, P133

[8] F+ and F centers in α-Al2O3 by electron-induced x-ray emission spectroscopy and cathodoluminescence [J].

Jonnard, P ;

Bonnelle, C ;

Blaise, G ;

Rémond, G ;

Roques-Carmes, C .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) :6413-6417

[9] TESTING AND OPERATION OF THE 15UD PELLETRON AT NSC [J].

KANJILAL, D ;

CHOPRA, S ;

NARAYANAN, MM ;

IYER, IS ;

JHA, V ;

JOSHI, R ;

DATTA, SK .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1993, 328 (1-2) :97-100

[10] Strain-induced channel waveguiding in bulk sapphire substrates [J].

Liu, MJ ;

Kim, HK .

APPLIED PHYSICS LETTERS, 2001, 79 (17) :2693-2695

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