Cu spin cleaning evaluation by SOR X-ray fluorescence analysis

被引:1
作者
Hayashi, H
Tsugane, K
Kagoshima, Y
Koyama, T
Watanabe, M
Kozuki, Y
机构
[1] SEZ Japan Inc, Bunkyo Ku, Tokyo 1130033, Japan
[2] Hitachi Ltd, Micro Device Div, Tokyo 1988512, Japan
[3] Univ Hyogo, Ako, Hyogo 6781297, Japan
来源
ULTRA CLEAN PROCESSING OF SILICON SURFACES VII | 2005年 / 103-104卷
关键词
copper; single wafer cleaning; SOR; X-ray fluorescence;
D O I
10.4028/www.scientific.net/SSP.103-104.217
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Cu contamination control is critically important in Cu interconnect device manufacturing lines. The frontside gas protected spin cleaning enables the effective removal of the Cu contaminant from the backside and bevel of a wafer. A small area on the bevel was measured for cleaning efficiency using SOR (Synchrotron Orbital Radiation) X-ray fluorescence. The atomic level Cu removal was detected on the bevel surface with the barrier metal Ta existing wafers. The high energy SOR X-ray analysis makes it possible to measure the Cu contamination, where conventional methods do not work.
引用
收藏
页码:217 / 220
页数:4
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