Surface core-level shifts of Ge(100)-2X1

被引：20
作者：
Pi, TW [1 ]
Wen, JF
Ouyang, CP
Wu, RT
机构：
[1] Synchrotron Radiat Res Ctr, Hsinchu, Taiwan
[2] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu, Taiwan
来源：
PHYSICAL REVIEW B | 2001年 / 63卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.63.153310
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Core-level photoemission spectra of the buckled Ge(001)-2x1 surface taken at various energies and emission angles are analyzed, using the inelastic mean free path (IMFP) to constrain the intensities of the contributions to the 3d signal of the first two surface layers and the bulk. This ansatz successfully represents data from the clean Ge(100) surface at all emission angles and photon energies. The surface core-level shifts of the up-dimer atom, down-dimer atom, and subsurface atom are then found at -442, -183, and +93 meV, respectively. They are in good agreement with the final-state theoretical calculations by Pehlke and Scheffler [Phys. Rev. Lett. 71, 2338 (1993)]. The IMFP is 3.5+/-0.2 Angstrom at 26 eV kinetic energy. Furthermore, we found that hulk and surface atoms have distinct spin-orbit splittings of 594 and 561 meV, respectively.
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页数：3
相关论文
共 9 条
[1]   CORE-LEVEL SHIFTS OF THE GE(100)-(2X1) SURFACE AND THEIR ORIGINS [J].
CAO, R ;
YANG, X ;
TERRY, J ;
PIANETTA, P .
PHYSICAL REVIEW B, 1992, 45 (23) :13749-13752
[2]   Evidence for three surface components in the 3d core-level photoemission spectra of Ge(100)-(2x1) surface [J].
Goldoni, A ;
Modesti, S ;
Dhanak, VR ;
Sancrotti, M ;
Santoni, A .
PHYSICAL REVIEW B, 1996, 54 (16) :11340-11345
[3]   ELECTRONIC-STRUCTURE OF CLEAN AND HYDROGEN-CHEMISORBED GE(001) SURFACES STUDIED BY PHOTOELECTRON-SPECTROSCOPY [J].
LANDEMARK, E ;
KARLSSON, CJ ;
JOHANSSON, LSO ;
UHRBERG, RIG .
PHYSICAL REVIEW B, 1994, 49 (23) :16523-16533
[4]   SURFACE CORE-LEVEL SHIFTS ON GE(100) - C(4X2) TO 2X1 AND 1X1 PHASE-TRANSITIONS [J].
LELAY, G ;
KANSKI, J ;
NILSSON, PO ;
KARLSSON, UO ;
HRICOVINI, K .
PHYSICAL REVIEW B, 1992, 45 (12) :6692-6699
[5]   EVIDENCE FOR SITE-SENSITIVE SCREENING OF CORE HOLES AT THE SI AND GE (001) SURFACE [J].
PEHLKE, E ;
SCHEFFLER, M .
PHYSICAL REVIEW LETTERS, 1993, 71 (14) :2338-2341
[6]   Growth of the Ge overlayer on Si(100)-(2 x 1) [J].
Pi, TW ;
Wu, RT ;
Ouyang, CP ;
Wen, JF ;
Wertheim, GK .
SURFACE SCIENCE, 2000, 461 (1-3) :L565-L569
[7]   Surface photoemission from Si(100) and inelastic electron mean-free-path in silicon [J].
Pi, TW ;
Hong, IH ;
Cheng, CP ;
Wertheim, GK .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 2000, 107 (02) :163-176
[8]   Surface sensitivity of Auger-electron spectroscopy and X-ray photoelectron spectroscopy [J].
Powell, CJ ;
Jablonski, A ;
Tilinin, IS ;
Tanuma, S ;
Penn, DR .
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1999, 98 :1-15
[9]  
SMITH NV, 1993, SURF SCI, V282, pL359, DOI 10.1016/0039-6028(93)90604-I
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