Recombination-enhanced formation of the metastable boron-oxygen complex in crystalline silicon

被引:70
作者
Bothe, K [1 ]
Hezel, R [1 ]
Schmidt, J [1 ]
机构
[1] Inst Solarenergieforsch Hameln Emmerthal, D-31860 Emmerthal, Germany
关键词
D O I
10.1063/1.1600837
中图分类号
O59 [应用物理学];
学科分类号
摘要
The formation process of the boron- and oxygen-related defect complex in crystalline silicon, responsible for the performance degradation of solar cells made on boron-doped Czochralski silicon (Cz-Si), is investigated on Cz-Si solar cells as a function of the applied voltage in the dark at temperatures ranging from 298 to 373 K. We show that the defect formation is not only a consequence of illumination or the application of a forward bias voltage but also occurs under equilibrium conditions at elevated temperatures in the dark. It can be partly suppressed by applying a reverse voltage. Our findings provide clear experimental evidence that a recombination-enhanced mechanism correlated with the total recombination rate is the driving force of the formation of the metastable defect. (C) 2003 American Institute of Physics.
引用
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页码:1125 / 1127
页数:3
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