Thermal adatoms an Si(001)

被引:74
作者
Tromp, RM
Mankos, M
机构
[1] IBM Corp, Div Res, Thomas J Watson Res Ctr, Yorktown Heights, NY 10598 USA
[2] ETEC Syst Inc, Hayward, CA 94545 USA
关键词
D O I
10.1103/PhysRevLett.81.1050
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Thermal adatoms (present on the surface at elevated temperature, in equilibrium with the step edges) art: of key importance in dynamic phenomena such as step capillary wave motions, epitaxial growth, surface phase transitions, and the decay of nonequilibrium structures by surface diffusion. Here we present the first direct measurements of the thermal adatom concentration on Si(001) at elevated temperatures, from which rye determine an adatom formation energy of 0.35 +/- 0.05 eV. Comparison with first-principles theory shows that the adatoms occur as dimers. These observations have direct implications for our understanding of surface diffusion and epitaxial growth.
引用
收藏
页码:1050 / 1053
页数:4
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